Notes:
- 優點:
- compact design suitable for SiPho.
- 改變折射率→ 改變notch wavelength.
- higher Q leads to considerable modulation.
- 缺點:
- Phase and Amplitude 交纏在一起
- Notch wavelength 需要溫度穩定.
- Higher Q rings are desirable but 頻寬較低.
- 調變原理:Carrier injection/ depletion 進行順向偏壓/ 逆向偏壓.